downloaded from elcodis.com electronic components distributor SSM3K128TU 2007-06-06 1 1. gate 2. source 3. drain toshiba field-effect transistor silicon n-channel mos type SSM3K128TU high-speed switching applications power management switch applications ? 4.0v drive ? low on-resistance : r on = 360m ? (max) (@v gs = 4.0v) : r on = 217m ? (max) (@v gs = 10v) absolute maximum ratings (ta = 25 ? c) characteristic symbol rating unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v dc i d 1.5 drain current pulse i dp 3.0 a drain power dissipation p d (note1) 500 mw channel temperature t ch 150 c storage temperature t stg ?55~150 c note 1: mounted on an fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 645 mm 2 ) electrical characteristics (ta = 25c) characteristic symbol test condition min typ. max unit drain-source breakdown voltage v (br) dss i d = 1 ma, v gs = 0 v 30 ? ? v drain cutoff current i dss v ds = 30 v, v gs = 0 v ? ? 1 a gate leakage current i gss v gs ? = 16 v, v ds = 0 v ? ? 1 a gate threshold voltage v th v ds = 5 v, i d = 1 ma 1.1 ? 2.6 v forward transfer admittance ? y fs ? v ds = 5 v, i d = 0.6 a (note2) 0.73 1.45 ? s i d = 0.6 a, v gs = 10 v (note2) ? 160 217 drain-source on-resistance r ds (on) i d = 0.6 a, v gs = 4.0 v (note2) ? 260 360 m input capacitance c iss ? 57 ? output capacitance c oss ? 33 ? reverse transfer capacitance c rss v ds = 15 v, v gs = 0 v, f = 1 mhz ? 12 ? pf total gate charge q g ? 2.8 ? gate-source charge q gs ? 1.6 ? gate-drain charge q gd v ds = 15 v, i d = 1.5 a v gs = 10 v ? 1.2 ? nc turn-on time t on ? 12.0 ? switching time turn-off time t off v dd = 15 v, i d = 0.6 a, v gs = 0~4.0 v, r g = 10 ? 6.9 ? ns drain-source forward voltage v dsf i d = -1.5 a, v gs = 0 v (note2) ? -0.85 -1.2 v note 2:pulse test unit: mm jedec D jeita D toshiba 2-2u1a weight: 6.6mg (typ.) ufm 1.70.1 2.10.1 1 2 2.00.1 3 0.3-0.05 +0.1 0.70.05 0.650.05 0.1660.05
downloaded from elcodis.com electronic components distributor SSM3K128TU 2007-06-06 2 switching time test circuit marking equivalent circuit (top view) notice on usage v th can be expressed as the voltage between gate and sour ce when the low operating current value is i d = 1 ma for this product. for normal switching operation, v gs (on) requires a higher voltage than v th and v gs (off) requires a lower voltage than v th. (the relationship can be established as follows: v gs (off) < v th < v gs (on). ) take this into consideration when using the device. handling precaution when handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 4.0 v t on t off (b) v in (c) v out 0 v v dd v ds (on) t r t f 10% 90% 90% 10% (a) test circuit v dd = 15 v r g = 10 d.u. < = 1% v in : t r , t f < 5 ns common source ta = 25c 0 4.0 v in out v dd 10 s r g kki 1 2 3 1 2 3
downloaded from elcodis.com electronic components distributor SSM3K128TU 2007-06-06 3 ambient temperature ta (c) ambient temperature ta (c) r ds (on) ? i d drain-source voltage v ds (v) i d ? v ds drain current i d (a) 0 2 0 0.5 1.0 2 vgs = 2.5 v 10 v 1 common source ta = 25 c 4.0v 1.5 5.0 v 3.5 v gate-source voltage v gs (v) i d ? v gs drain current i d (a) 10 0 0.1 1 0.001 0.01 0.0001 4 ? 25 c ta = 100 c 25 c 2 v th ? ta gate threshold voltage v th (v) 3.0 0 ? 50 0 150 50 100 r ds (on) ? ta drain-source on-resistance r ds (on) (m ? ) 0 ? 50 0 50 150 200 100 drain-source on-resistance r ds (on) (m ? ) 0 gate-source voltage v gs (v) 10 0 400 r ds (on) ? v gs 800 200 20 ? 25 c ta = 100 c 25 c i d = 0.6 a common source common source v ds = 5 v vgs = 10 drain current i d (a) drain-source on-resistance r ds (on) (m ? ) 0 1 2 0 400 800 200 4.0v common source ta = 25c 3 3 1.0 common source 0.6 a / 4.0v i d = 0.6 a / v gs = 10 v 400 600 2.0 common source v ds = 5v i d = 1 ma 600 3.0 v 800 600 1 3
downloaded from elcodis.com electronic components distributor SSM3K128TU 2007-06-06 4 drain current i d (a) forward transfer admittance ? y fs ? (s) |y fs | ? i d 0.01 10 0.1 1 0.1 1 0.3 0.03 0.01 drain-source voltage v ds (v) c ? v ds capacitance c (pf) 1 0.1 1 10 100 10 100 30 3 drain current i d (a) switching time t (ns) t ? i d 1 0.01 100 0.1 1000 1 10 10 t f t on t r common source v dd = 15 v v gs = 0 4.0 v ta = 25 c r g = 10 total gate charge qg (nc) dynamic input characteristic gate-source voltage v gs (v) 0 0 2 4 8 3 10 6 2 1 drain reverse current i dr (a) drain-source voltage v ds (v) i dr ? v ds 10 0 0.1 1 0.001 0.01 -0.5 -1.0 ? 25 c ta =100 c 25 c -1.5 common source v gs = 0 v g d s i dr common source ta = 25c f = 1 mhz v gs = 0 v 1000 c iss c oss c rss t off 300 common source v ds = 5 v ta = 25c 10 3 common source i d = 1.5 a ta = 25 c 24v vds= 15v
downloaded from elcodis.com electronic components distributor SSM3K128TU 2007-06-06 5 transient thermal impedance rth (c/w) pulse width t w (s) r th ? t w ambient temperature t a (c) p d ? t a drain power dissipation p d (mw) 800 0 200 100 400 600 150 1000 50 0 -50 a b 0.001 0.01 0.1 1 10 100 1 100 600 10 b c a single pulse a: mounted on ceramic board (25.4mm 25.4mm 0.8t , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) c: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 0.36 mm 2 3) a: mounted on ceramic board (25.4mm 25.4mm 0.8t , cu pad : 645 mm 2 ) b: mounted on fr4 board (25.4mm 25.4mm 1.6t , cu pad : 645 mm 2 ) 600
downloaded from elcodis.com electronic components distributor SSM3K128TU 2007-06-06 6 restrictions on product use 20070701-en ? the information contained herein is subject to change without notice. ? toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity an d vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba produc ts, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshib a products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconduct or devices,? or ?toshiba semiconductor reliability handbook? etc. ? the toshiba products listed in this document are in tended for usage in general electronics applications (computer, personal equipment, office equipment, measuri ng equipment, industrial robotics, domestic appliances, etc.).these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfuncti on or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage incl ude atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, et c.. unintended usage of toshiba products listed in his document shall be made at the customer?s own risk. ? the products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. ? please contact your sales representative for product- by-product details in this document regarding rohs compatibility. please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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